Towards graphene nanoribbon-based electronics

Graphene nanoribbon FETs for digital electronics: experiment and modeling

One-dimensional nanostructures of graphene such as graphene nanoribbons (GNRs) can prove attractive for digital electronics in the form of interband tunneling transistors, as they are capable of high drive currents. Here, we report on the transport properties of p-n junctions formed in GNR field effect transistors (FETs). It is found that the current density in the devices is indeed high; in th...

Graphene nanoribbon blends with P3HT for organic electronics.

In organic field-effect transistors (OFETs) the electrical characteristics of polymeric semiconducting materials suffer from the presence of structural/morphological defects and grain boundaries as well as amorphous domains within the film, hindering an efficient transport of charges. To improve the percolation of charges we blend a regioregular poly(3-hexylthiophene) (P3HT) with newly designed...

Carbon nanotubes and graphene towards soft electronics

Although silicon technology has been the main driving force for miniaturizing device dimensions to improve cost and performance, the current application of Si to soft electronics (flexible and stretchable electronics) is limited due to material rigidity. As a result, various prospective materials have been proposed to overcome the rigidity of conventional Si technology. In particular, nano-carb...

Graphene nanoribbon heterojunctions and heterostructures

A graphene nanoribbon memory cell.

S D C1 C2 Over the past few years there has been a surge of interest in graphene, a recently isolated [ 1 ] one-atom-thick layer of carbon atoms arranged in a honeycomb lattice. From the application point of view this interest has mainly been driven by the high carrier mobility of graphene [ 2–4 ] which enables fabrication of fi eld-effect transistors (FETs) with much smaller channel resistance...